Discussion on the difference between Silicon carbide and gallium nitride materials

Semiconductor is a kind of material between conductor and insulator. It has the characteristics of controllable electrical conductivity. When the semiconductor is stimulated by external light and heat, its conductivity will change significantly, and the conductivity of the semiconductor will increase dramatically by adding trace impurities to the pure semiconductor. Since the discovery of silver sulfide by scientists Faraday, semiconductor materials such as Silicon, germanium, boron, antimony, Silicon Carbide, and gallium nitride have been discovered and applied one after another.

All aspects of our lives can not be separated from semiconductor technology. Electrical appliances, lighting, mobile phones, computers, electronic devices, etc. all require semiconductor materials. Silicon carbide (SiC) and gallium nitride (GaN) belong to the third generations semiconductor materials and have a very wide application. foreground.

The similarities between Silicon carbide and gallium nitride

Silicon carbide and gallium nitride belong to wide band semiconductor materials. They have the characteristics of large band gap width, high electron drift saturation speed, small dielectric constant, and good conductivity. With the high demand of the market for the miniaturization and thermal conductivity of semiconductor devices, the market demand for such materials has skyrocketed and is suitable for the production of radiation-resistant, high-frequency, high-power and high-density integrated electronic devices.

The advantages and disadvantages of Silicon carbide and gallium nitride

Silicon carbide, also known as diamond sand, is made of quartz sand, petroleum Coke, wood chips and other raw materials through the resistance furnace high temperature smelting. Silicon carbide also has a rare mineral in nature, Mosangshi. Among the modern non-oxide high-tech refractory materials such as C, N, and B, Silicon carbide is the most widely used and most economical one. At present, the industrial silicon carbide produced in China is divided into black silicon carbide and green silicon carbide, both of which are hexagonal crystals.

The same and different materials of Silicon carbide and gallium nitride

Labelled gallium silicon carbide semiconductor quartz sand

[ Guide] Semiconductor is a kind of material between conductor and insulator. It has the characteristics of controllable electrical conductivity. When the semiconductor is stimulated by external light and heat, its conductivity will change significantly, and the conductivity of the semiconductor will increase dramatically by adding trace impurities to the pure semiconductor.

Chinese Powder Network Semiconductor is a kind of material between conductor and insulator. It has the characteristics of controllable electrical conductivity. When the semiconductor is stimulated by external light and heat, its conductivity will change significantly, and the conductivity of the semiconductor will increase dramatically by adding trace impurities to the pure semiconductor. Since the discovery of silver sulfide by scientists Faraday, semiconductor materials such as Silicon, germanium, boron, antimony, Silicon Carbide, and gallium nitride have been discovered and applied one after another.

All aspects of our lives can not be separated from semiconductor technology. Electrical appliances, lighting, mobile phones, computers, electronic devices, etc. all require semiconductor materials. Silicon carbid e(SiC) and gallium nitride (GaN) belong to the third generations semiconductor materials and have a very wide application. foreground.

The similarities between Silicon carbide and gallium nitride

Silicon carbide and gallium nitride belong to wide band semiconductor materials. They have the characteristics of large band gap width, high electron drift saturation speed, small dielectric constant, and good conductivity. With the high demand of the market for the miniaturization and thermal conductivity of semiconductor devices, the market demand for such materials has skyrocketed and is suitable for the production of radiation-resistant, high-frequency, high-power and high-density integrated electronic devices.

The advantages and disadvantages of Silicon carbide and gallium nitride

Silicon carbide, also known as silicon carbide, is made by using quartz sand, petroleum coke, wood chips and other raw materials through high-temperature smelting in an electric resistance furnace. Silicon carbide is also a rare mineral in the nature - Moissanite. Among the non-oxide high-tech refractory raw materials such as C, N and B, silicon carbide is the most widely used and economical one. At present, China's industrial production of silicon carbide is divided into black silicon carbide and green silicon carbide, both of which are hexagonal crystals.

Gallium nitride is a compound of nitrogen and gallium, a semiconductor with a direct energy gap. The structure of the compound is similar to that of fibrin ore and has high hardness. The energy gap of gallium nitride is very wide, 3.4 electron volts, which can be used in high-power, high-speed photoelectric devices. For example, gallium nitride can be used in purple laser diodes and can be used without nonlinear semiconductor pump solid lasers. Under the conditions, Produces purple lasers.

Application fields and difficulties of Silicon carbide and gallium nitride

Silicon carbide is the most mature semiconductor material in the development. Countries around the world attach great importance to the research of Silicon Carbide. The United States, Europe and Japan have not only formulated corresponding research plans at the national level.

Silicon carbide has become an important abrasive because of its great hardness, but its application range exceeds that of general abrasive. For example, its high temperature resistance and thermal conductivity make it one of the preferred kiln materials for tunnel kilns or shuttle kilns. Its conductivity makes it an important electric heating element. In addition, Silicon carbide materials can also be used in functional ceramics, refractory materials, metallurgical raw materials and other applications.

The development problem of Silicon carbide devices is not the design problem, but the production process of chip structure, such as the microtube defect density of Silicon carbide wafers, low extension process efficiency, special requirements of doping processes, and the temperature resistance of supporting materials. Another problem with Silicon carbide production is environmental protection, because silicon carbide produces harmful gases such as carbon monoxide and sulfur dioxide during the smelting process. At the same time, if dust particles are not properly treated, pollution is very serious.

Gallium nitride is a new semiconductor material for the development of microelectronic devices and optoelectronic devices. It has broad prospects in applications of optoelectronics, lasers, high temperature and high power devices and high frequency microwave devices.

There are three problems in the development of gallium nitride materials. One is how to obtain high-quality, large-size GaN seed crystals, because it takes several years to cultivate a two-inch seed crystal directly using ammonia heat; The second is that for gallium nitride materials, due to the fact that the substrate single crystal has not been solved for a long time, the density of heteroepitaxial defects is quite high, because gallium nitride is too polar to obtain better metal-semiconductor ohms through high doping. Contact, process manufacturing is more complex; Third, the industrial chain of gallium nitride has not yet been fully formed.

Due to the low natural content, most of the silicon carbide is artificial. The common method is to mix quartz sand with coke, use the silica and petroleum coke, add salt and wood chips, put it into the electric furnace, and heat it to about 2000 °C. At high temperatures, silicon carbide micro-powder is obtained after various chemical processes.

For the first time, French and Swiss scientists used gallium nitride to successfully produce high-electron migration rate transistors (HEMTs) with excellent performance on the(100)-Silicon(crystal orientation 100) base. A company in Zhuhai owns an 8-inch gallium silicon nitride production line, the first production line in China to mass produce the 8-inch gallium silicon nitride, according to OFweek. At present, gallium nitride process manufacturing problem is driven by thermal mismatch stress during film cooling, and it is prone to rupture or warping, which becomes the main obstacle to gallium nitride.

Silicon carbide and gallium nitride may become mainstream in the semiconductor market

With the country's emphasis on third-generation semiconductor materials, the semiconductor materials market in China has developed rapidly in recent years. Among them, Silicon carbide and gallium nitride have attracted much attention. Silicon carbide and gallium nitride have many similarities. For example, they all have good prospects, and their material properties are better than those of the first second generation semiconductor materials. The difference between the two characteristics has created different applications. In the future, Silicon carbide and gallium nitride will exert their respective advantages and complement each other to support the sky of semiconductor applications.

In spite of this, the industrial problems of Silicon carbide and gallium nitride remain to be solved. For example, the manufacturing process and quality of materials in China have not reached the top in the world, material manufacturing equipment depends on serious imports, and Silicon carbide and gallium nitride materials and devices. Industrial chains have not yet been formed. These problems need to be solved step by step in order to make domestic semiconductor materials stand among the top ranks in the world.

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